Critical Modeling Issues in Negative Bias Temperature Instability
نویسندگان
چکیده
Both the physical mechanisms as well as the modeling of negative bias temperature instability (NBTI) have attracted growing attention during the last years. While the reaction-diffusion theory had been the dominant explanation for a relatively long period, a growing number of authors have recently voiced their doubts regarding its validity. We give a brief review of suggested models and highlight their strengths and, more importantly, their weaknesses. We take care not to get lost in the intricacies of the various models by only qualitatively discussing their features. As will be shown, this is more than sufficient to demonstrate considerable shortcomings. Finally, we summarize our latest modeling attempts which try to overcome the observed modeling contradictions and show comparisons to experimental data.
منابع مشابه
Impact Analysis of NBTI/PBTI on SRAM VMIN and Design Techniques for Improved SRAM VMIN
Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) are critical circuit reliability issues in highly scaled CMOS technologies. In this paper, we analyze the impacts of NBTI and PBTI on SRAM VMIN, and present a design solution for mitigating the impact of NBTI and PBTI on SRAM VMIN. Two different types of SRAM VMIN (SNM-limited VMIN and time-limited VMI...
متن کاملControversial issues in negative bias temperature instability
In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is reaction-limited. Basic issues of disagreement are summariz...
متن کاملModeling of Negative Bias Temperature Instability
After its discovery nearly forty years ago, negative bias temperature instability (NBTI) has again moved to the center of scientific attention as a significant reliability concern for highly scaled pMOSFETs. 3 The concern stems from the large number of unsaturated dangling bonds (Pb centers ) at the Si/SiO2 interface, which have to be passivated in order to avoid trapping levels in the bandgap....
متن کاملAccurate NBTI-induced Gate Delay Modeling Based on Intensive SPICE Simulations
One of the main reliability concerns in the nanoscale logic is the time-dependent variation caused by Negative Bias Temperature Instability (NBTI). It increases the switching threshold voltage of pMOS transistors and as a result slows down signal propagation along the paths between flip-flops, thus it may cause functional failures in the circuit. Therefore accurate prediction of circuit aging i...
متن کامل